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钨,绝缘线, W, 0.075mm导体直径, 0.02mm绝缘厚度, PTFE Insulation, 3N
钨,绝缘线, W, 0.075mm导体直径, 0.02mm绝缘厚度, PTFE Insulation, 3N图片
品牌: Goodfellow
纯度含量: 99.9%
产地: 英国
索取资料及报价
品牌:Goodfellow
纯度含量:99.9%
产地:英国
产品介绍
订货号包装规格
Length (Round)
531-116-631m
389-582-502m
697-823-495m
227-930-1410m
491-270-1420m

产品参数

Conductor Diameter[导体直径]0.075mm
Insulation Thickness[绝缘厚度]0.02mm
Insulation[绝缘材料]PTFE
Length[长度]1m - 20m
Purity[纯度]99.9%
Mechanical Properties(机械性能)
Bulk modulus ( GPa ) ( Hard )311.0
Bulk modulus ( GPa ) ( Soft )311.0
Hardness - Vickers ( kgf mm⁻² ) ( Hard )500
Hardness - Vickers ( kgf mm⁻² ) ( Soft )360
Material conditionSoft
Material conditionHard
Poisson's ratio ( Hard )0.280
Poisson's ratio ( Soft )0.280
Tensile modulus ( GPa ) ( Hard )411.00
Tensile modulus ( GPa ) ( Soft )411.00
Tensile strength ( MPa ) ( Hard )1920.00
Tensile strength ( MPa ) ( Soft )550.00 - 620.00
Yield strength ( MPa ) ( Soft )550.0
Atomic Properties(原子属性)
Atomic number74
Atomic weight ( amu )183.85000
Crystal structureBody Centred Cubic
Electronic structureXe4f¹⁴5d⁴6s²
Ionisation potential ( No./eV )1 / 7.98
Ionisation potential ( No./eV )2 / 17.7
Natural isotope distribution ( Mass No./% )183 / 14.3
Natural isotope distribution ( Mass No./% )182 / 26.3
Natural isotope distribution ( Mass No./% )186 / 28.6
Natural isotope distribution ( Mass No./% )180 / 0.1
Natural isotope distribution ( Mass No./% )184 / 30.7
Photo-electric work function ( eV )4.55
Thermal neutron absorption cross-section ( Barns )18.5000
Valences shown2 ,3,4,5,6
Electrical Properties(电气特性)
Electrical resistivity ( μOhmcm )5.4@20℃
Superconductivity critical temperature ( K )0.0154
Temperature coefficient ( K⁻¹ )0.00480 @0-100℃
Thermal emf against Pt (cold 0C - hot 100C) ( mV )1.12
Thermal Properties(热性能)
Coefficient of thermal expansion ( x10⁻⁶ K⁻¹ )4.500 @0-100℃
Latent heat of evaporation ( J g⁻¹ )4009
Latent heat of fusion ( J g⁻¹ )192.00
Melting point ( C )3410.00
Specific heat ( J K⁻¹ kg⁻¹ )133.0 @25℃
Thermal conductivity ( W m⁻¹ K⁻¹ )173.00 @0-100℃
Physical Properties(物理性质)
Boiling point ( C )5660
Density ( g cm⁻³ )19.300 @20℃

其他参数

公差

导体直径±10%
长度+5% / -1%
绝缘厚度仅有名义尺寸
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